Structural Properties of Laterally Overgrown GaN
نویسندگان
چکیده
منابع مشابه
Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si „111) substrates
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Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition
Transmission electron microscopy techniques are applied to investigate three-dimensional (3D) microstructures of the GaN nonplanar substrate selectively grown by metalorganic chemical vapor deposition. Two-step lateral epitaxial overgrowth (LEO) has been utilized and optimized to fabricate fully coalesced nonplanar mesa substrate templates with the trapezoidal cross-section. All threading dislo...
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The structural and dynamical properties of zincblende b-GaN are calculated within a three-body Tersoff potential coupled with a molecular-dynamics simulation scheme for a temperature ranging from 300 to 900 K. A good agreement between the calculated and experimental values of the lattice constant, the bulk modulus and its derivative, and the cohesion energy are obtained. We have also calculated...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 2000
ISSN: 1092-5783
DOI: 10.1557/s1092578300004154